CS2N10AS-G mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤ 220mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free
Applica.
The
package form is SOT-23, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson.
CS2N10 AS-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a batt.
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